During the 4G / 5G Summit held by Qualcomm in Hong Kong, Samsung announced some news related to the memories, which will have to adapt to the higher speed of the network. It will start already in 2019 when the first UFS 3.0 type memory will be available, in the 128, 256 and 512 GB sizes.
Instead, we should wait until at least 2021 for the first solutions with 1 TB of UFS 3.0 memory, although it will be possible to make smartphones with two modules of 512 GB, to reach already 1 TB of internal memory. Samsung intends to take advantage of the evolution of 3D NAND technology to increase storage density, without increasing the size of memory modules.
The UFS 3.0 standard will not only increase the size of the internal memory but also a doubling of the band, to the full advantage of the speed of data storage.
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Together with the internal memories will change the type of RAM, with the roll out of the LPDDR5 technology, for which we will have to wait until 2020. Samsung will start mass production in a couple of years therefore, and promises a band between 44 and 51 GB /s, with a 20% reduction in consumption.
This is an interesting 2019, rich in technological innovations related to the 5G networks, which apparently will lead to a major evolution also in the other components of smartphones.
