Samsung Electronics has announced the release of its largest capacity 12nm class 32Gb DDR5 DRAM product. This product offers double the capacity of 16Gb modules within the same package size. This enables 128GB DRAM module production without the TSV process. It also simplifies the manufacturing process and reduces costs. The new DRAM is ideal for the AI era, where high-performance computing and data processing are essential.
The Most Advanced 12nm-Class DDR5 DRAM
Samsung Electronics started mass production of its double data rate 5 (DDR5) DRAM made with a 12-nanometer (nm) class process node in May. The 16Gb DDR5 DRAM was developed in December last year, and it was verified for compatibility with AMD. The 32Gb DDR5 DRAM is the most advanced among DRAMs available. It has a maximum speed of 7.2Gbps, which means it can process 60GB in around a second.
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Sang Joon Hwang, executive vice president of the Memory Development Group of Samsung Electronics’ Memory Division, said, “Based on Samsung’s latest 12-nanometer 32Gb memory, Samsung can develop solutions to achieve 1TB memory modules”. He claims that this will help meet the needs of AI in the era of big data. In this era, there is a growing demand for large-capacity DRAM memory.
Samsung’s new DRAM will advance next-generation computing, data centers, and AI applications with its high capacity and speed. The 32Gb DDR5 DRAM is paving the way for up to 128 GB memory modules. This will be essential for high-performance computing and data processing in the future.
Conclusion
Samsung Electronics has released its largest capacity 12nm class 32Gb DDR5 DRAM product. This product offers double the capacity of 16Gb modules within the same package size. The new DRAM is ideal for the AI era, where high-performance computing and data processing are essential. It simplifies the manufacturing process and reduces costs. It is also aimed at data centers, AI, and new computing applications. Samsung’s new DRAM will advance next-generation computing, data centers, and AI applications with its high capacity and speed, paving the way for up to 128 GB memory modules.
